KURIHARA Kenji | NTT Basic Research Laboratories

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著作論文

Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography

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