Namatsu H | Ntt Basic Res. Lab. Kanagawa Jpn

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著作論文

Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Linewidth Fluctuations Caused by Polymer Aggregates in Resist Films
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
Suppressed Aggregate Extraction Development (SAGEX) Resists
A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
An Electron Beam Nanolithography System and its Application to Si Nanofabrication
Metrology of Atomic Force Microscopy for Si Nano-Structures
Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
Edge-Enhancement Writing for Electron Beam Nanolithography
Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)

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