An Electron Beam Nanolithography System and its Application to Si Nanofabrication

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-12-30

著者

• Nagase M

  Ntt Basic Research Laboratories Ntt Corporation

• TAKENAKA Hisataka

  NTT Interdisciplinary Research Laboratories

• NAGASE Masao

  NTT LSI Laboratories

• NAMATSU Hideo

  NTT LSI Laboratories

• KURIHARA Kenji

  NTT LSI Laboratories

• IWADATE Kazumi

  NTT LSI Laboratories

• MURASE Katsumi

  NTT LSI Laboratories

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• Kurihara Kazuaki

  Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute

• Kurihara Kazuaki

  Fujitsu Laboratories Inorganic Materials & Polymers Laboratory

• Namatsu H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Iwadate K

  Ntt Lsi Laboratories

関連論文

• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• X-Ray Standing Wave Analysis of GaAs/Si Interface
• Investigation of Edge Plasmas in the Anchor Cell Region of GAMMA 10 : Fluids, Plasmas, and Electric Discharges
• Measurement of End Loss Electrons and Ions from a Hot Ion Plasma in a Tandem Mirror
• Velocity-Space Diffusion of Wave-Heated Electrons in a Mirror Field
• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Linewidth Fluctuations Caused by Polymer Aggregates in Resist Films
• Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates
• Examination of Correlation of Surface Morphologies of Top-Silicon and Buried Oxide Layers in High-Temperature-Annealed Separation by IMplanted OXygen Wafers
• Abnormal Threshold Voltage Dependence on Gate Length in Ultrathin-Film n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (nMOSFET's) Using Separation by Implanted Oxygen (SIMOX) Technology
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Study of Potential Formation in an Open Magnetic Field Configuration
• Energy Analysis of ECRH-Induced End-Loss Warm Electrons in a Tandem Mirror
• Potential Distribution in the End Region of the GAMMA10 Tandem Mirror Associated with Electron Flow Control
• Current Balance at an Endplate of the GAMMA10 Tandem Mirror
• Axial and Radial Potential Distributions in the GAMMA10 Tandem Mirror
• Validity of a Model Electron Distribution Function in an End Region of a Tandem Mirror
• Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
• Suppressed Aggregate Extraction Development (SAGEX) Resists
• A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
• Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
• Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
• An Electron Beam Nanolithography System and its Application to Si Nanofabrication
• Metrology of Atomic Force Microscopy for Si Nano-Structures
• Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
• A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection
• Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
• Edge-Enhancement Writing for Electron Beam Nanolithography
• Observation of a Radial Current at a Plug/Barrier Cell in GAMMA10 : Fluids, Plasmas, and Electric Discharges
• Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
• Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
• Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
• Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
• Structure of Trimer-Type Isocyanate Hardening Agents and Reactivity of Their Isocyanate Group
• Estimation of Reactivity of Isocyanate Groups by Calculation and Magnetochemical Measurement
• Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary
• Piezoelectric Properties of PbNi_Nb_O_3-PbTiO_3-PbZrO_3 Ceramics
• Soft X-Ray Reduction Lithography Using Multilayer Mirrors : X-Ray Lithography
• Soft X-Ray Reduction Lithography Using Multilayer Mirrors
• Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
• Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
• Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
• Vertical to Surface Transmission Electro-Photonic Device (VSTEP) and Its Application to Optical Interconnection and information Processing
• Detector Characteristics of a Vertical-Cavity Surface-Emitting Laser
• Current versus Light-Output Characteristics with No Definite Threshold in pnpn Vertical to Surface Transmission Electro-Photonic Devices with a Vertical Cavity
• Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
• Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
• Evaluation of Large-Area Mo/Si Multilayer Soft X-Ray Mirrors Fabricated by RF Magnetron Sputtering
• Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter
• Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
• Fabrication of Low Line Edge Roughness Mold for Photo-Nanoimprint
• Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone
• AFI Suppressing Effect of an HTS RF Receive Filter with High Selectivity for Base Stations of Digital Wireless Communications
• Spurious Suppression Effect by Transmit Bandpass Filters with HTS Dual-Mode Resonators for 5GHz Band
• Temperature Dependence of the Phase Coherence Length of High-Mobility AlGaAs/GaAs Quantum-Wire Rings
• A Resonator for Tunable Superconducting Power Filters with Cavities for 5GHz Band
• Independent Characterization of Density and Interface Roughness of Multilayers Using X-Ray Standing Waves
• Effect of Electrode Materials on Lead Lanthanum Zirconate Titanate with Heating under Reduced Atmosphere
• Measurements of Diffusion Coefficients of Water in Electron Cyclotron Resonance Plasma SiO_2
• Fabrication of Low Line Edge Roughness Mold for Photo-Nanoimprint
• Electrooptic Properties of Lead Zirconate Titanate Films Prepared on Silicon Substrate
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Crystallinity of Microscopically Patterned (Pb,La)(Zr,Ti)O3 Films on (001)Nb-Doped SrTiO3 Substrates Prepared by Chemical Solution Deposition Process with Resist Molds

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