Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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MURASE Katsumi
NTT LSI Laboratories
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KUWAGAKI Mamoru
NTT LSI Laboratories
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Kuwagaki M
Ntt Lsi Laboratories
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Kuwagaki Mamoru
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- An Electron Beam Nanolithography System and its Application to Si Nanofabrication
- Metrology of Atomic Force Microscopy for Si Nano-Structures
- Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter
- Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone
- Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
- Silicon HBT with a Low-Resistivity Amorphous SiC_x Emitter
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
- Effects of Hydrogen Dilution of Silane on Properties of Glow-Discharged Undoped Hydrogenated Silicon
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon