Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-03-15

著者

• MURASE Katsumi

  NTT LSI Laboratories

関連論文

• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• An Electron Beam Nanolithography System and its Application to Si Nanofabrication
• Metrology of Atomic Force Microscopy for Si Nano-Structures
• Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter
• Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

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