Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
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概要
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The substrate temperature dependence of the electron drift mobility and lifetime in glow-discharged a-Si: H films has been measured. The room temperature electron mobility increases nearly exponentially with increasing substrate temperature. The temperature dependence of the electron mobility reveals that the activation energy of the mobility decreases slightly with increasing substrate temperature. Results are discussed in terms of the conduction band tail width or micro-crystalline formation. The electron lifetime depends also on the substrate temperature in a different manner from the electron mobility and has a maximum near 200℃.
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kuwagaki M
Ntt Lsi Laboratories
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Kuwagaki Mamoru
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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