Carrier Transport and Generation in Orthorhombic Sulphur Crystals by Pulsed X-Rays

概要

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A sudy of the dependence of the carrier mobilities on temperature and crystal thickness in orthorhombic sulphur crystals was performed using 0.4μsec X-ray pulses in order to avoid surface effect. The saturation of the collected charge at applied fields exceeding 40kV/cm was found to be due to the so-called "schubweg effect." At 290°K the values of schubweg per unit field for electrons and holes are estimated at 6×10^<-7> and (1-5)×10^<-6>cm^2V^<-1>, respectively. With the mobility data, the results lead to the lifetimes of 800μsec for electrons and 66μsec for holes. The number of carrier pairs generated by X-rays is relatively insensitive to temperature. The energy necessary to create an electron-hole pair lies between 16 and 30eV. The effect of excitons on carrier generation may be important in uniform excitation by X-rays.
社団法人日本物理学会の論文
1968-10-05