Recombination Centers in γ-Ray Irradiated Boron Doped P-Type Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-08-05
著者
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nakashima Kenshiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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