Electrodeless Method for Measuring Photoconductivity Spectrum of Heat Treated Silicon
スポンサーリンク
概要
- 論文の詳細を見る
An electrodeless method for measuring photoconductivity spectra using microwave (10 GHz) absorption has been applied to high-resistivity silicon heat-treated at high temperatures. Experimental results show that this method is useful for measuring the photoionization energies for several kinds of defects, especially in high-resistivity materials.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
関連論文
- TED-AJ03-197 AN EXPERIMENTAL STUDY ON LOCAL FLAME DISPLACEMENT VELOCITY OF PREMIXED TURBULENT FLAME
- Studies of Recombination Centers in Gamma-Irradiated p-Type Sillicon
- Effect of Gold on the Anneal in Electron-Irradiated P-Type Si
- Defect Photoluminescence in Quenched High-Purity Silicon
- Optical and Thermal Ionization of Iron-Related Defects in Silicon
- Fe-Related Defects in Heat-Treated Al-doped Si
- Electron Irradiation on p-Type Si at 77K
- Recombination Centers in γ-Ray Irradiated Boron Doped P-Type Si
- Deep Levels due to Radiation Defects in P-Type GaSb
- Electrical and Optical Studies in Gallium Antimonide
- ICTS Measurements of Interface Properties in GaSb MOS Structure
- Defect Levels in Thermally-Quenched Silicon Crystals
- Electrodeless Method for Measuring Photoconductivity Spectrum of Heat Treated Silicon
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
- In-Situ Cleaning of 4H-SiC (0001) Surfaces by Using Pulsed Laser Irradiation
- The Effects of Neutron Irradiation in p-Type Silicon