Deep Levels due to Radiation Defects in P-Type GaSb
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Deep levels of defect states introduced by Co^<60>γ-rays and electron irradiations of the GaSb pn-junction have been investigated by capacitance transient spectroscopy. A dominant hole trap at E_v+0.27 eV has been found to be introduced irrespective of the energy of the irradiating particles. This trap center disappears at two annealing stages (around 70 and 250℃). The PL (photo-luminescence) via band-to-band transitions vanishes after irradiation, and shows a recovery in its intensity at the corresponding annealing stages (120 and 260℃) to those of the hole trap. This result suggests that the hole trap should act as an efficient non-radiative recombination center. The high-energy (10 MeV) electron irradiation effectively introduces another hole trap at E_v+0.26 eV. The origins of these hole traps are discussed on the basis of their annealing properties and the irradiating particle dependence on the defect production.
- 社団法人応用物理学会の論文
- 1987-03-20
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