Optical and Thermal Ionization of Iron-Related Defects in Silicon
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概要
- 論文の詳細を見る
The optical and thermal ionization energies of several Fe-related defects in Fe-diffused Si are determined simultaneously using the photostimulated capacitance transient method together with deep-level transient spectroscopy. Two defect states with thermal electron-ionization energies of 0.36 and 0.56 eV to the conduction band, respectively, are confirmed to originate from the Fe-related defects, in addition to the donor level due to interstitial Fe. The origins of these defects are discussed on the basis of their behaviors in n- and p-type Si.
- 社団法人応用物理学会の論文
- 1986-02-20
著者
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Nakashima Kenshiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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CHIJIIWA Masahiro
Department of Electrical Engineering, Nagoya Institute of Technology
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Chijiiwa Masahiro
Department Of Electrical Engineering Nagoya Institute Of Technology
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