Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
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概要
- 論文の詳細を見る
(Er, O)-doped hydrogenated amorphous Si (a-Si:H) thin films were prepared on Si or SiO2 substrates by a novel catalytic chemical vapor deposition (Cat-CVD)/laser ablation hybrid process which simultaneously performs a Cat-CVD of a-Si:H matrices and a doping of laser-ablated (Er, O) from an Er2O3 sintered target. These (Er, O)-doped a-Si:H films showed excellent photoluminescence (PL) properties in spite of the low temperature of the process (200°C during deposition and no postannealing). The Er and O contents of these films were evaluated by Rutherford backscattering and non-Rutherford elastic resonance scattering (NRERS), respectively. It was clarified that the dependence of the (Er, O) content on ambient pressure was not identical for O and Er. Thus, the O/Er content ratio, correlated to the PL intensity, strongly depended on the ambient pressure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Sakai Joe
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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AKIYAMA Haruo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Matsumura Hideki
School Of Materials Science Jaist (japan Advanced Institute Of Science And Technology)
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Eryu Osamu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nakashima Kenshiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Masuda Atsushi
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Masuda Atsushi
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi-gun, Ishikawa 923-1292, Japan
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Sakai Joe
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi-gun, Ishikawa 923-1292, Japan
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Nakashima Kenshiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Akiyama Haruo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Matsumura Hideki
School of Material Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi-gun, Ishikawa 923-1292, Japan
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