ICTS Measurements of Interface Properties in GaSb MOS Structure
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概要
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Interface state density distributions and hole capture cross sections have been determined as a function of the energy for MOS structures made with anodic oxides on p-type GaSb by the ICTS (isothermal capacitance transient spectroscopy) technique. The interface state density increases towards the band edge from 3×10^<11> to 1×10^<12>/cm^2eV in the energy range of 0.3 to 0.03 eV above the valence band.
- 社団法人応用物理学会の論文
- 1987-02-20
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