In-Situ Cleaning of 4H-SiC (0001) Surfaces by Using Pulsed Laser Irradiation
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概要
- 論文の詳細を見る
The 4H-SiC (0001) surfaces before and after pulsed laser cleaning (PLC) have been investigated by $I$–$V$, $C$–$V$, and time-of-flight (TOF) measurements. The electrical characteristics for metal/4H-SiC structures were improved by PLC at the laser energy density of 30 mJ/cm2. The ideality factor and the pinning degree for metal/4H-SiC structures decreased by using PLC at 30 mJ/cm2 prior to metallization. TOF measurements indicate that atoms on 4H-SiC surfaces are desorbed by pulsed laser irradiation above 30 mJ/cm2. We found that pulsed laser irradiation at 50 mJ/cm2 causes decomposition of 4H-SiC surfaces. We discuss the laser energy density dependence of PLC of 4H-SiC (0001) surfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Eryu Osamu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nakashima Kenshiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Kato Mina
Department Of Diagnostic And Interventional Radiology Aichi Cancer Center Hospital
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Abe Koji
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Abe Koji
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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Sumitomo Masakiyo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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Kariya Yusuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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Kato Mina
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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Nakashima Kenshiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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