Electrical Conductivity and Galvanomagnetic Effects in (SN)_x Single Crystal
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概要
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Microwave conductivity o. perpendicular to the b axis of crystalline (SN),has been estimated by the cavity perturbation method in the skin-depth regimeto be about 400-'cm-' which increases with decreasing temperature monoto-nously, contrary to the case of dc measurement. This fact indicates that o, isstrongly influenced by the infer-fiber barrier and the intrinsic conductivity aniso-tropy in a fiber is much less than that estimated by dc method in bulk material.From the normal positive magnetoresistance observed either above 77 K or evenbelow 4.2 K at higher magnetic fields (>30 kG), carrier mobilities along theb axis and perpendicular to it are estimated to be about 250 and 6 cm'7Vsec,respectively, at 290 K. Negative magnetoresistance observed below 4.2 K atthe magnetic fields below 30 kG is discussed in terms of the spin dependentscattering of carriers in connection with the appearance of the resistance minimum,Experimental data on Hall effect of crystalline (SN). is also discussed.
- 社団法人日本物理学会の論文
- 1979-07-15
著者
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YOSHINO Katsumi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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KANETO Keiichi
Department of Computer Science and Electronics, Kyushu Institute of Technology
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Kaneto Keiichi
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kaneto K
Faculty Of Engineering Osaka University
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YAMAMOTO Masazumi
Department of Electrical Engineering,Faculty of Engineering,Osaka University
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Yamamoto Masazumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kaneto Keiichi
Department of Biological Functions and Engineering, Graduate School of Life Sciences and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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