Negative Photoconductivity in n-InSb under Transverse Magnetic Field
スポンサーリンク
概要
- 論文の詳細を見る
Photoconductivity in n-InSb irradiated with an intense light beam from a Q-switched CO_2 laser was measured in transverse magnetic fields at temperatures from 175 K to 17 K. In zero or low magnetic fields normal photoconductivity was always observed. As the magnetic field was increased, however, the photoconductivity decreased in magnitude and finally changed the sign from positive to negative, for example, in a magnetic field exceeding several hundreds gauss at 90 K. This anomalous phenomenon was not observed in longitudinal magnetic fields. It was confirmed from the measurement of photo-Hall effect that the negative photoconductivity is not due to a decrease in electron concentration. A qualitative speculation in terms of the two-carrier transverse magnetoresistance is presented.
- 社団法人日本物理学会の論文
- 1972-04-05
著者
-
INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Hongo Shozo
Department Of Electrical Engineering Faculty Of Engineering Osaka University:(present Address) Depar
-
UEDA Zen-ichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Shirafuji Junji
Department Of Electrical And Electronic Engineering
-
Ueda Zen-ichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
関連論文
- Optical and Electrical Properties of Electrochemically Doped n- and p-Type Polythiophenes
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- Moving Striations and Helical Oscillation in a Longitudinally Magnetized Positive Column
- Moving Striation of Plasma in a Longitudinal Magnetic Field
- High-Field Electron Transport in a-Si:H
- Electron-Beam-Induced Conduction in Polystyrene
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Characterization of InGaAs Phosphidized by a Plasma Process
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAs
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors
- Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions
- Hydrogenation of InP by Phosphine Plasma
- Mass Spectroscopy of Vaporized (SN)_x Polymer
- Electronic Conduction in Polyethylene Induced by Pulsed Electron Beam
- Simultaneous Observation of the Thermally Stimulated Current and the Thermoluminescence in Polyethylene
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Optical Damage in LiNbO_3 Inducedby X-ray Irradiation
- Electron Hall Mobility in Reduced LiNbO_3
- Temperature Dependence of Raman Scattering of LiNbO_3
- Raman Scattering in Ethyl p-[(p-Methoxybenzylidene)Amino]Cinnamate
- Raman and Rayleigh Scattering in Liquid Crystal
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Photoluminescence and Optical Properties of Ge_Se_x Glasses
- Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
- Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Characteristics of Polythiophene Battery
- Characteristics of Electro-Optic Device Using Conducting Polymers, Polythiophene and Polypyrrole Films
- Electrical Properties of Conducting Polymer, Poly-Thiophene, Prepared by Electrochemical Polymerization
- Electrical Resistivity and Negative Magnetoresistance in (SNBr_γ)_x Crystal
- Electrical Conductivity and Galvanomagnetic Effects in (SN)_x Single Crystal
- Temperature Dependence of Reflectance Spectrum of (SN)_x Single Crystal
- Harmonic Generation of Ion Cyclotron Frequency in Longitudinally Magnetized Plasmas
- Ultrasonic Wave Amplification in Gaseous Plasmas
- Nonlinear Effects of Helical Instability in Short Magnetized Positive Columns
- Diffusion and Low Frequency Oscillation of Plasma in a Magnetic Field
- Harmonic Generation in a Short Magnetized Plasma Column
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Current Saturation Associated with Ultrasonic Amplification in CdS Crystals
- Optimization of Single Crystal Preparation of Bi_2Sr_2CaCu_2O_x Superconductor by the Travelling Solvent Floating Zone Method
- Microwave Scattering by Turbulent Plasma in a Magnetic Field
- Internal Electron Emission in Phosphorus-Doped Polycrystalline Diamond Field Emitters
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- InSb Carrier Lifetime in High Electric Field
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface : B-5: GaAs IC
- Photoconduction, Thermally Stimulated Luminescence, and Optical Damage in Single Crystal of LiNbO_3
- Optical Dielectric Breakdown of Alkali-Halide Crystals by Q-Switched Lasers
- Barrier Heights of Schottky Junctions on n-InP Treated with Phosphine Plasma
- Schottky Barrier Height of Phosphidized InGaAs
- Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films
- Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
- Formation of InP Metal-Insulator-Semiconductor Schottky Junctions by UV Laser-Induced Photolytic Process of Phosphine Gas
- Studies of Recombination Centers in Gamma-Irradiated p-Type Sillicon
- Effect of Microwave Polarization on Absorption by Cylindrical Plasma
- Carrier Transport and Generation in Orthorhombic Sulphur Crystals by Pulsed X-Rays
- X-Ray Induced Photoconductivity in Anthracene
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon
- Role of Dangling Bonds in Photo-Induced ESR in Melt-Quenched Ge S Glasses
- Raman and Infrared Studies on Vibrational Properties of Ge-Se Glasses
- Transmitted Phonon Drag Measurements in Silicon
- Field Dependence of Electron Bombardment Carrier Generation in α-Sulphur Crystals
- Recombination Centers in γ-Ray Irradiated Boron Doped P-Type Si
- Time of Flight Measurement of Carrier Mobility in Ge_xSe_ Glasses
- Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Ge-S Glasses