Flux Creep, Pinning Potential and Critical Current Density in Bi_2Sr_2Ca_1Cu_2O_x Single Crystals
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概要
- 論文の詳細を見る
Flux creep characteristic at 4.4 K in Bi_2Sr_2Ca_1Cu_2O_x single crystals grown by flux method has been measured as a function of magnetic field applied parallel to the c-axis. The logarithmic relaxation rate of the magnetization dM/d ln t is analyzed on the basis of the flux creep model in combination with an extended Bean's critical state model in which n-th power dependence (0≦n≦1) of critical current density on magnetic field is assumed. The pinning potential and the zero-temperature critical current density are estimated to be 0.014〜0.056 eV and 10^4〜10^5 A/cm^2, respectively, depending on oxygen partial pressure of the crystal growth environment.
- 社団法人応用物理学会の論文
- 1991-04-01
著者
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Nagano Yoshihisa
Department Of Electrical Engineening Faculty Of Engineering Osaka University
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FUJII Tatsuhiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Fujii Tatsuhiko
Department Of Electrical Engineening Faculty Of Engineering Osaka University
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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Shirafuji Junji
Department Of Electrical Engineening Faculty Of Engineering Osaka University
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