Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
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概要
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The hot electron distribution function in z-type GaAs has been experimentallyinvestigated by photo[uminescence spectroscopy of the (e, h) radiative transitionunder the presence of high electric fields. The hot electron distribution functiondeduced from the emission spectrum at 77 K shows a clear kir?k around theelectron energy corresponding to the LO phonon energy. The elaborate com-parison between the experimental observation and Monte Carlo simulationconfirms that the observed kink is due to the dominant LO phonon emissionprocess in the hot electron system. The experimentally determined temperatureand mean energy of electrons are compared with the theoretical estimation.
- 社団法人日本物理学会の論文
- 1978-11-15
著者
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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TAKENAKA NOBUYUKI
Department of Orthopaedic Surgery, Teikyo University
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Takenaka Nobuyuki
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Takenaka Nobuyuki
Department Mechanical Of Engineering Kobe University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cornell University
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shirafuji Junji
Department Of Electrical And Electronic Engineering
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SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering Osaka University
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