A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inoue Masataka
Department Of Electrical Engineering Osaka Institute Of Technology
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SASA Shigehiko
Department of Electrical Engineering, Osaka Institute of Technology
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YODOGAWA Satoshi
Department of Electrical Engineering, Osaka Institute of Technology
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OHYA Akio
Department of Electrical Engineering, Osaka Institute of Technology
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Ohya Akio
Department Of Electrical Engineering Osaka Institute Of Technology
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Sasa Shigehiko
Department Of Electrical Engineering Osaka Institute Of Technology
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Yodogawa Satoshi
Department Of Electrical Engineering Osaka Institute Of Technology
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- Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
- A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Fabrication of Superconducting Transistors using InAs/(AIGa)Sb Quantum Wells
- Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect Transistors
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
- Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAs
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Clinical research on treatment of vertically fractured posterior teeth by intentional replantation using dentin bonding and composite resin
- Electrical Resistivity and Negative Magnetoresistance in (SNBr_γ)_x Crystal
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface : B-5: GaAs IC
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs