Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
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概要
- 論文の詳細を見る
We fabricated and characterized an InAs/AlGaSb single electron transistor produced by the atomic force microscope (AFM) oxidation process. The structure of the transistor we developed has two in-plane gate electrodes which are separated from the current channel by a 0.1-µm-wide gap defined by AFM oxidation and selective GaSb/AlGaSb and InAs etching processes. A complete transistor operation, including clear pinch-off characteristics is achieved by applying negative gate voltages at 4.2 K. Near the pinch-off, an island is formed in the middle of the InAs channel by depleting narrow InAs constrictions fabricated on both sides of the island. We observed aCoulomb gap of 1.6 mV, which is consistent with the estimated self-capacitance of the island. The oscillatory behavior in the I–V characteristics suggests a contribution of quantum effects to the electron tunneling process.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-01-30
著者
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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IKEDA Takatoshi
Department of Electrical Engineering, Osaka Institute of Technology
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Anjiki Kazutomo
Department Of Electrical Engineering Osaka Institute Of Technology
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Sasa Shigehiko
Department Of Electrical Engineering Osaka Institute Of Technology
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Ikeda Takatoshi
Department of Electrical Engineering, Osaka Institute of Technology,
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Sasa Shigehiko
Department of Electrical Engineering, Osaka Institute of Technology,
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Inoue Masataka
Department of Electrical Engineering, Osaka Institute of Technology,
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