Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAs
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概要
- 論文の詳細を見る
Influences of carrier-carrier scattering on the electron distribution function inGaAs has been examined by the Monte Carlo calculation taking into accountelectron-electron and/or electron-hole scatterings. The calculated results werecompared with the experimental distribution functions determined from theband-to-band recombination spectra under high electric fields.
- 社団法人日本物理学会の論文
- 1979-09-15
著者
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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TAKENAKA NOBUYUKI
Department of Orthopaedic Surgery, Teikyo University
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INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Takenaka Nobuyuki
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Takenaka Nobuyuki
Department Mechanical Of Engineering Kobe University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cornell University
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Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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