High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
スポンサーリンク
概要
著者
-
TAGUCHI Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University
-
INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
SHIRAFUJI Junji
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Inuishi Yoshio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
-
KOBAYASHI Tetsuji
Toshiba Research and Development Center , Tokyo Shibaura Electric Co., Ltd.
-
Shirafuji Junji
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Shirafuji Junji
Department Of Electrical And Electronic Engineering
-
Kobayashi Tetsuji
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
関連論文
- Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
- Optical and Electrical Properties of Electrochemically Doped n- and p-Type Polythiophenes
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- Moving Striations and Helical Oscillation in a Longitudinally Magnetized Positive Column
- Moving Striation of Plasma in a Longitudinal Magnetic Field
- High-Field Electron Transport in a-Si:H
- Biexciton Luminescence from GaN Epitaxial Layers
- Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
- Electron-Beam-Induced Conduction in Polystyrene
- Epitaxial Growth of Poly(dimethylsilane) Evaporated Films on Poly(tetrafluoroethylene) Layer
- Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
- Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes
- Characterization of InGaAs Phosphidized by a Plasma Process
- Deep Electron Traps in n-InP Induced by Plasma Exposure
- Effect of Hydrogen Plasma Treatment on n-InP Surfaces
- Characteristics of Electron Trap Induced in n-InP by Hydrogen Plasma Exposure
- Effect of Phosphine on Plasma-Induced Traps in n-InP
- Measurement of Surface Fermi Level in Phosphidized GaAs
- Evidence for Phosphorus Passivation of Plasma-Induced Damage at GaAs Surface Probed by EL2 Traps
- Influence of Inter-Carrier Scattering on Hot Electron Distribution Function in GaAs
- Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors
- Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
- Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
- Mass Spectroscopy of Vaporized (SN)_x Polymer
- Electronic Conduction in Polyethylene Induced by Pulsed Electron Beam
- Simultaneous Observation of the Thermally Stimulated Current and the Thermoluminescence in Polyethylene
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs
- Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide
- Optical Damage in LiNbO_3 Inducedby X-ray Irradiation
- Electron Hall Mobility in Reduced LiNbO_3
- Temperature Dependence of Raman Scattering of LiNbO_3
- Raman Scattering in Ethyl p-[(p-Methoxybenzylidene)Amino]Cinnamate
- Raman and Rayleigh Scattering in Liquid Crystal
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Photoluminescence and Optical Properties of Ge_Se_x Glasses
- Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
- Transport of Photoexcited Carriers in Evaporated Ge_xSe_ Glass Films
- Dispersive Transport in Hydrogenated a-Si Prepared by rf Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Characteristics of Polythiophene Battery
- Characteristics of Electro-Optic Device Using Conducting Polymers, Polythiophene and Polypyrrole Films
- Electrical Properties of Conducting Polymer, Poly-Thiophene, Prepared by Electrochemical Polymerization
- Electrical Resistivity and Negative Magnetoresistance in (SNBr_γ)_x Crystal
- Electrical Conductivity and Galvanomagnetic Effects in (SN)_x Single Crystal
- Temperature Dependence of Reflectance Spectrum of (SN)_x Single Crystal
- Harmonic Generation of Ion Cyclotron Frequency in Longitudinally Magnetized Plasmas
- Ultrasonic Wave Amplification in Gaseous Plasmas
- Nonlinear Effects of Helical Instability in Short Magnetized Positive Columns
- Diffusion and Low Frequency Oscillation of Plasma in a Magnetic Field
- Harmonic Generation in a Short Magnetized Plasma Column
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Temperature and Composition Dependences on the Electrical Properties of As-grown ZnHgTe Crystals Grown by the Travelling Heater Method : Semiconductors and Semiconductor Devices
- Effect of Annealing on Photoluminescence Properties in Ar^+-Ion Irradiated MOCVD-Grown ZnSe Films : Semiconductors and Semiconductor Devices
- Preparation and Ion-Beam-Induced Luminescence of Thermal CVD Diamond
- Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- Current Saturation Associated with Ultrasonic Amplification in CdS Crystals
- Microwave Scattering by Turbulent Plasma in a Magnetic Field
- InSb Carrier Lifetime in High Electric Field
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Negative Photoconductivity in n-InSb under Transverse Magnetic Field
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe
- High Purity CdTe and Its Application to Radiation Detectors : B-5: SENSING DEVICES
- High-Purity CdTe Single Crystals Grown from Solutions
- Annealing Behavior of Defects in Electron-Irradiated p-Type CdTe
- Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride
- Effect of Electron Irradiation on Edge Emission Spectra in CdTe
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface : B-5: GaAs IC
- Photoconduction, Thermally Stimulated Luminescence, and Optical Damage in Single Crystal of LiNbO_3
- Optical Dielectric Breakdown of Alkali-Halide Crystals by Q-Switched Lasers
- Studies of Recombination Centers in Gamma-Irradiated p-Type Sillicon
- Effect of Microwave Polarization on Absorption by Cylindrical Plasma
- Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
- Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note
- Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Ge-S Glasses