Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-12-01

著者

• TAGUCHI Tsunemasa

  Department of Electrical and Electronic Engineering, Yamaguchi University

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• TAGUCHI Tsunemasa

  Graduate School of Science and Engineering, Yamaguchi University

• TAGUCHI Takao

  SORTEC Corporation

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• Taguchi T

  Department Of Materials Science And Engineering Yamaguchi University

• Taguchi T

  Research Laboratories Nippondenso Co. Ltd.

• KURAI Satoshi

  Department of Electrical and Electronic Engineering, University of Tokushima

• KUBO Shuichi

  Department of lmmunology The tokyo Metropolitan Institute of Medical Science

• Kubo S

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kubo Shuichi

  Department Of Internal Medicine Saiseikai Yokohama-shi Nanbu Hospital

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• Taguchi Tsunemasa

  Graduate School Of Science And Engineering Yamaguchi University

• Taguchi Tsunemasa

  Faculty Of Engineering Yamaguchi University

• Taguchi T

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Taguchi Tsunemasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Taguchi Tsunemasa

  Department Of Materials Science And Engineering Yamaguchi University

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