Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-01-15

著者

• NAOI Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima,

• KURAI Satoshi

  Graduate School of Science and Engineering, Yamaguchi University

• SAKAI Shiro

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki

• Kurai Satoshi

  Science And Engineering Yamaguchi University

• KURAI Satoshi

  Department of Electrical and Electronic Engineering, University of Tokushima

• Sakai Shiro

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Naoi Y

  Univ. Tokushima Tokushima Jpn

• Naoi Yoshiki

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University

• Kurai Satoshi

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai S

  Sci. Univ. Tokyo Tokyo Jpn

• Ohmi Susumu

  Central Research Laboratories Sharp Corporation

• ABE Toshimitsu

  Department of Electrical and Electronic Engineering, Tokushima University

• Abe Toshimitsu

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Naoi Yoshiki

  Department of Electrical and Electronic Engineering, The University of Tokushima

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