Sakai Shiro | Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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概要
関連著者
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Sakai S
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica
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Sakai S
Electrotechnical Lab. Ibaraki
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Electrotechnical Lab. Ibaraki Jpn
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering Tokushima University
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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Hao Maosheng
Satellite Venture Business Laboratory Nitride Photonic Semiconductors Laboratory The University Of T
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Wada Naoki
Department Of Electrical And Electronic Engineering Tokushima University
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Wada Naoki
Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University
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Wada Naoki
Department Of Electric And Electronic Engineering University Of Tokushima:matsushita Kotobuki Electr
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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KURAI Satoshi
Graduate School of Science and Engineering, Yamaguchi University
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Sato Hisao
Nitride Semiconductor Co. Ltd.
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Wada Naoki
Department of Applied Chemistry, The University of Tokyo
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Sato H
Research And Development Center Gunze Limited
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Wada Naoki
Department Of Applied Chemistry The University Of Tokyo
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Kurai Satoshi
Science And Engineering Yamaguchi University
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Sato Hiroyasu
Faculty Of Engineering Mie University
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Sato Hiroharu
Multimedia Eng. Lab.
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Sato H
Univ. Tokushima Tokushima Jpn
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KURAI Satoshi
Department of Electrical and Electronic Engineering, University of Tokushima
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Tokushima University
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SATO Hisao
Department of Dermatology, Jichi Medical School
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Li H‐d
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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Li Hongdong
Satellite Venture Business Laboratory The University Of Tokushima
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Lacroix Y
Univ. Tokushima Tokushima Jpn
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Lacroix Yves
Satellite Venture Business Laboratory The University Of Tokushima
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Lee Young-bae
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Umeno Masayoshi
Department Of Engineering Science Nagoya Institute Of Technology
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Liu Yuhuai
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Fujii Syuitsu
Adtec Co. Ltd.
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Youn Doo-hyeb
Department Of Electrical And Electronic Engineering The University Of Tokushima
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WANG Tao
Nitride Semiconductors Co., Ltd.
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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HAO Maosheng
Satellite Venture Business Laboratory, Nitride Photonic Semiconductors Laboratory, The University of
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YAMASHITA Kenji
Department of Electrical and Electronic Engineering, University of Tokushima
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Yamashita K
Department Of Astrophysics Nagoya University
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Yamashita Koujin
Department Of Astrophysics Nagoya University
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Yamashita Kenichi
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University
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Yang Tao
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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FUKUI Masuo
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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WANG Tao
Satellite Venture Business Laboratory, The University of Tokushima
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HAO Maosheng
Department of Electrical and Electronic Engineering, The University of Tokushima
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NAKAJIMA Sadanojo
Department of Electrical and Electronic Engineering, The University of Tokushinna
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FUJII Sadao
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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AMEMIYA Yoshifumi
Department of Electronics, Faculty of Engineering, Nagoya University
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Hao Maosheng
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nakajima Shigeki
Department Of Electrical Engineering Faculty Of Science And Technology Kinki University
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Shintani Yoshihiro
Department Of Electrical And Electronic Engineering Tokushima University
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Nakajima Sadanojo
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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LACROIX Yves
Satellite Venture Business Laboratory, The University of Tokushima
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Bai Jie
Satellite Venture Business Laboratory The University Of Tokushima
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SHINTANI Yoshihiro
Department of Electrical and Electronic Engineering, Tokushima University
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LACHAB Mohamed
Satellite Venture Business Laboratory, Nitride Photonic Semiconductors Laboratory, The University of
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TOBE Miharu
Department of Electronics, Faculty of Engineering, Nagoya University
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Lachab Mohamed
Sateliite Venture Business Laboratory Tokushima University
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TAKEYASU Masanari
Department of Electronic and Computer Engineering, Nagoya Institute of Technology
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Takahashi Yasuhito
Department of Electronics, Faculty of Engineering, Nagoya University
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Romano Linda
Department Of Electrical And Electronic Engineering University Of Tokushima
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AO Jin-Ping
Satellite Venture Business Laboratory, The University of Tokushima
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Ao Jin‐ping
Univ. Tokushima Tokushima‐shi Jpn
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Ao Jin-ping
Satellite Venture Business Laboratory The University Of Tokushima
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Ao J‐p
Univ. Tokushima Tokushima‐shi Jpn
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Ao J‐p
Univ. Tokushima Tokushima Jpn
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BAI Jie
Department of Electrical and Electronic Engineering, University of Tokushima
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LIU Yuhuai
Satellite Venture Business Laboratory, University of Tokushima
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LEE Young-Bae
Department of Electrical and Electronic Engineering, The University of Tokushima
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LI Hong-Dong
Satellite Venture Business Laboratory, The University of Tokushima
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BAI Jie
Satellite Venture Business Laboratory, The University of Tokushima
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YOSHIMI Shinichi
Department of Electrical and Electronic Engineering, Tokushima University
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Ueta Yoshihiro
Department of Electrical and Electronic Engineering, Tokushima University
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MAHANTY Sourindra
Department of Electrical and Electronic Engineering, The University of Tokushima
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KAWASAKI Koji
Department of Electric and Electronic Engineering, University of Tokushima
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FUJII Sadao
Central Research Laboratory, Kanegafuchi Chemical Industry Co.
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FURUTA Shigeru
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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AOKI Takahiro
Department of Electronics, Faculty of Engineering, Nagoya University
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Mahanty Sourindra
Department Of Electrical And Electronic Engineering The University Of Tokushima
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NAKAGAWA Daisuke
Department of Electrical and Electronic Engineering, The University of Tokushima
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Liu Yu-huai
Satellite Venture Business Laboratory The University Of Tokushima
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Kawasaki K
Tokyo Inst. Technol. Yokohama Jpn
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Ao Jin-ping
Satellite Venture Business Lab. The University Of Tokushima
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Sakai Shiro
Department Of Engineering Science Nagoya Institute Of Technology
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Bai Jie
Department Of Cell Biology And Medical Genetics The First Military Medical University
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Nakagawa D
Rohm Co. Ltd. Kyoto Jpn
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Lachab M
Tokushima Univ. Tokushima Jpn
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BASAK Durga
Satelite Venture Buisiness Laboratory, Tokushima University
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Nakagawa Daisuke
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Aoki Takahiro
Department Of Engineering Science Nagoya Institute Of Technology:(present Address) Musashino Electri
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Ueta Yoshihiro
Department Of Electrical And Electronic Engineering Tokushima University
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Fujii Sadao
Central Research Laboratories Kaneka Corporation
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野中 源一郎
九州大学薬学部
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酒井 士郎
徳島大学工学部
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TAGUCHI Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University
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TAGUCHI Tsunemasa
Graduate School of Science and Engineering, Yamaguchi University
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INOKO Fukuji
The University of Tokushima
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OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
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Shima Akihiro
Department Of Molecular Biology Keio University School Of Medicine
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UMENO Masayoshi
Nagoya Institute of Technology
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Sun H
Nitride Photonic Semiconductor Laboratory Svbl The University Of Tokushima
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LIU Tu-Huai
Satellite Venture Business Laboratory, The University of Tokushima
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IZUMI Yuji
Department of Electrical and Electronic Engineering, The University of Tokushima
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AO Jinping
Satellite Venture Business Laboratory, The University of Tokushima
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JIANG Nan
Department of Electrical and Electronic Engineering, The University of Tokushima
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KAWABE Akira
Department of Biotechnology, Graduate School of Engineering, Osaka University
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Izumi Yuji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Liu Tu-huai
Satellite Venture Business Laboratory The University Of Tokushima
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酒井 士郎
徳島大 工
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MISAWA Hiroaki
Department of Ecosystem Engineering, Graduate School of Engineering, The University of Tokushima
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Jiang N
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Jiang Nan
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Inoko F
The University Of Tokushima
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Inoko Fukuji
Department Of Mechanical Engineering Tokushima University
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Tsukihara M
Venture Business Laboratory Of Intellectual Property Office The University Of Tokushima
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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Shima Akihiro
Department Of Engineering Science Nagoya Institute Of Technology
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Yuasa Takayuki
Nagoya Inst. Of Technology
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Umeno Masayoshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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SHAO Chun
Department of Electrical and Electronic Engineering, Tokushima University
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TERAUCHI Youji
Department of Electrical and Electronic Engineering, Tokushima University
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Wada Naoki
Matsushita Kotobuki Electronics Industries Ltd.
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Koshiba Shohei
Nippon Sanso K.K.
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Uematsu Kunimasa
Nippon Sanso K.K.
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Higashiyama Kenji
Matsushita Kotobuki Electronics Industries Ltd.
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Shintani Yoshihiro
Technical college, Tokushima Univetsity
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SUSAWA Hiromoto
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
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Taguchi T
Department Of Materials Science And Engineering Yamaguchi University
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TAKENAKA Hironori
Department of Electrical and Electronic Engineering, The University of Tokushima
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OHSHIBA Hidenori
Department of Electrical and Electronic Engineering, The University of Tokushima
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TOBITA Manabu
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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NISHINO Katsusi
Department of Electrical and Electronic Engineering, The University of Tokushima
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TOTTORI Satoru
Department of Electrical and Electronic Engineering, University of Tokushima
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MORISHIMA Yoshiyuki
Department of Electrical and Electronic Engineering, University of Tokushima
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LIU Yu-Huai
Satellite Venture Business Laboratory, The University of Tokushima
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Sun Hong-bo
Nitride Photonic Semiconductor Laboratory Svbl The University Of Tokushima
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Tobita Manabu
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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KUBO Shuichi
Department of lmmunology The tokyo Metropolitan Institute of Medical Science
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Kubo S
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Kubo Shuichi
Department Of Internal Medicine Saiseikai Yokohama-shi Nanbu Hospital
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Umeno Masayoshi
Nagoya Inst. Of Technology
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Sakai Shiro
Department Of Electrical And Electronic Engineering Tokushima University
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Sakai S
Tokushima Univ. Tokushima
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TSUKIHARA Masashi
Department of Electrical and Electronic Engineering, The University of Tokushima
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Morishima Yoshiyuki
Department Of Clinical Laboratory Kinki University Hospital
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Morishima Yoshiyuki
Department Of Electrical And Electronic Engineering University Of Tokushima
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Takenaka Hironori
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Ao Jinping
Satellite Venture Business Laboratory The University Of Tokushima
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Tottori Satoru
Satellite Venture Business Laboratory University Of Tokushima
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Inoko Fukuji
Detartment Of Mechanical Engineering Tokushima University
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Okada Tatsuya
Department Of Mechanical Engineering Tokushima University
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Hu Xiong
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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CHUNG Sung
Satellite Venture Business Laboratory, Tokushima University
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FAREED Qhalid
Satellite Venture Business Laboratory, Tokushima University
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KAWAKAMI Yoshihisa
Department of Electrical and Electronic Engineering, Tokushima University
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MISAWA Hiroaki
Research Institute for Electronic Science, Hokkaido University
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AOYAMA Kazunori
Department of Electrical and Electronic Engineering, Tokushima University
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Kawabe Akira
Department Of Biotechnology Graduate School Of Engineering Osaka University
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Kawabe A
Kyoto Univ. Kyoto Jpn
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YAMADA Yoichi
Department of Electrical and Electronic Engineering, Yamaguchi University
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JUODKAZIS Saulius
Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima
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ELISEEV Petr
Graduate School of Engineering, The University of Tokushima
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ELISEEV Petr
Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima
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KAWAMICHI Syuichi
Department of Electrical and Electronic Engineering, The University of Tokushima
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SUGITA Taiichi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University
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Taguchi Tsunemasa
Graduate School Of Science And Engineering Yamaguchi University
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Taguchi Tsunemasa
Faculty Of Engineering Yamaguchi University
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Sumiyoshi Kazuhide
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Inoko Fukuji
Department Of Mechanical Engineering Faculty Of Engineering Tokushima University
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Ueta Yoshihiro
Advanced Technology Research Laboratories Sharp Corporation
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酒井 士郎
徳島大学
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Susawa Hiromoto
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
著作論文
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Role of Dislocation in InGaN Phase Separation
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- A Novel Method of Bulding a Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- Growth of InAsP on InP by Liquid Phase Electroepitaxy
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Nucleation Control in the Growth of Bulk GaN by Sublimation Method
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
- MOCVD Growth of InP Using Plasma Pre-Cracking
- Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors
- Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System
- Wavelength Division GaAlAs/GaAs Solar Cells Grown by MOCVD : II-1: COMPOUND SOLAR CELLS
- Wavelength Demultiplexing Photodiode with Very High Isolation Ratio
- AlGaAs/GaAs Wavelength-Dividing Photodiode with Multi-Layer Filters Grown by MOCVD
- Schottky Barrier Height of Au/p-In_Ga_xAs_yP_ with Native Oxide
- Development of Mott Diode for FIR Detection
- Selective Lateral Growth Mechanism of GaAs by Liquid-Phase Electroepitaxy
- Green Light Emission From GaInNAs/GaN Multiple Quantum Well
- Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
- A novel method of building a compositional non-uniformity in an InGaN layer grown on sapphire substrate by metalorganic chemical vapor deposition
- Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition