HAO Maosheng | Department of Electrical and Electronic Engineering, The University of Tokushima
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概要
関連著者
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HAO Maosheng
Department of Electrical and Electronic Engineering, The University of Tokushima
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Hao Maosheng
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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SATO Hisao
Department of Dermatology, Jichi Medical School
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Sato Hisao
Nitride Semiconductor Co. Ltd.
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Sato H
Research And Development Center Gunze Limited
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sato Hiroyasu
Faculty Of Engineering Mie University
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Sato Hiroharu
Multimedia Eng. Lab.
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SUGAHARA Tomoya
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sato H
Univ. Tokushima Tokushima Jpn
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Hao Maosheng
Satellite Venture Business Laboratory Nitride Photonic Semiconductors Laboratory The University Of T
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Sugahara Tomoya
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara T
The Authors Are With The Department Of Electrical And Electronic Engineering University Of Tokushima
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Sugahara Tomoya
Graduate School Of Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sato H
Department Of Applied Chemistry Faculty Of Engineering Kumamoto University
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SATO Hisano
Wireless Research Laboratory, Matsushita Elec. Ind., Co.
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Sunagawa Hiromi
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Sato Hisao
Department Of Dermatology Jichi Medical School
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sato Hisao
Department of Applied Physics, Graduate School of Engineering, Tohoku University
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sugahara Tomoya
The authors are with the Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
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Romano Linda
Department Of Electrical And Electronic Engineering University Of Tokushima
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KURAI Satoshi
Graduate School of Science and Engineering, Yamaguchi University
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SOGA Tetsuo
Instrument and Analysis Center, Nagoya Institute of Technology
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Kurai Satoshi
Science And Engineering Yamaguchi University
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YAMASHITA Kenji
Department of Electrical and Electronic Engineering, University of Tokushima
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Yamashita K
Department Of Astrophysics Nagoya University
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KURAI Satoshi
Department of Electrical and Electronic Engineering, University of Tokushima
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita Koujin
Department Of Astrophysics Nagoya University
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Soga Tetsuo
Instrument And Analysis Center Nagoya Institute Of Technology
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Kurai Satoshi
Department Of Electrical And Electronic Engineering Tokushima University
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Yamashita K
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Yamashita Kenichi
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao C
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao Chunlin
Department Of Ion Beam Bioengineering Institute Of Plasma Physics Academia Sinica
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LIANG Junwu
Institute of Semiconductors, Chinese Academy of Sciences
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Liang Junwu
Institute Of Semiconductors Chinese Academy Of Sciences
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Yamashita Kimihiro
Department Of Industrial Chemistry Faculty Of Engineering The University Of Tokyo:(present Address)d
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Umeno M
Nagoya Inst. Technology
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Yamashita Kenji
Department Of Bioscience And Biotechnology Fuculty Of Engineering Okayama University
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ROMANO Linda
Department of Electrical and Electronic Engineering, University of Tokushima
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Youn Doo-hyeb
Department Of Electrical And Electronic Engineering The University Of Tokushima
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TOTTORI Satoru
Department of Electrical and Electronic Engineering, University of Tokushima
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MORISHIMA Yoshiyuki
Department of Electrical and Electronic Engineering, University of Tokushima
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Morishima Yoshiyuki
Department Of Clinical Laboratory Kinki University Hospital
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Morishima Yoshiyuki
Department Of Electrical And Electronic Engineering University Of Tokushima
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Tottori Satoru
Satellite Venture Business Laboratory University Of Tokushima
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WANG Yutian
Institute of Semiconductors, Chinese Academy of Sciences
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Wang Yutian
Institute Of Semiconductors Chinese Academy Of Sciences
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ZHENG Lianxi
Institute of Semiconductors, Chinese Academy of Sciences
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XIAO Zhibo
Institute of Semiconductors, Chinese Academy of Sciences
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XIAO Jianfei
Institute of Semiconductors, Chinese Academy of Sciences
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Xiao Zhibo
Institute Of Semiconductors Chinese Academy Of Sciences
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Xiao Jianfei
Institute Of Semiconductors Chinese Academy Of Sciences
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Zheng Lianxi
The State Key Laboratory Of High Performance Ceramics And Superfinemicrostructure Shanghai Institute
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Zheng Lianxi
Institute Of Semiconductors Chinese Academy Of Sciences
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Zheng Liaoying
The State Key Laboratory Of High Performance Ceramics And Superfinemicrostructure Shanghai Institute
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WANG Yutian
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
著作論文
- Ohmic Contact to P-Type GaN
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer