JIMBO Takashi | Research Center for Micro-Structure Device, Nagoya Institute of Technology

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著作論文

Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
Initial Condition and Calculation Method for the Numerical Simulation of LPE
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
High-Efficiency Monolithic Three-Terminal GaAs/Si Tendem Solar Cells Fabricated by Metalorganic Chemical Vapor Deposition
Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
Suppression of Dark-Line Defect Growth in AlGaAs/InGaAs Single Quantum Well Lasers Grown on Si Substrates
First Fabrication of a Reliable AlGaAs/GaAs LED on Si with Self-Assembled GaAs Islands Active Region
Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate
Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
Optical Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD
Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy
A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
High Efficiency Monolithic GaAs/Si Tandem Solar Cell Grown by Metalorganic Chemical Vapor Deposition
Al_xGa_As/Si (r=0-0.22) Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
Simultaneous Formation of Both Single- and Multi-Wall Carbon Nanotubes by Ultrasonic Spray Pyrolysis
Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
Minority Carrier Properties of GaAs on Si Grown by Metalorganic Chemical Vapor Deposition
First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

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