UMENO Masayoshi | Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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概要
関連著者
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno M
Nagoya Inst. Technology
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electronic Engineering Chubu University
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Zhao Guang-yuan
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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趙 廣元
名古屋工業大学・ベンチャー・ビジネス・ラボラトリー
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Ishikawa H
Kddi R&d Laboratories Inc.
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YU Guolin
Nagoya Institute of Technology
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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NAKADA Naoyuki
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Nakada N
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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YU Guolin
Research Centerfor Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang
Satellite Venture Business Laboratory, Nagoya Institute of Technology
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Kazi Zaman
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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RAHMAN Md.
Nagoya Institute of Technology
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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NAKAMURA Kouichi
Department of Morphological Brain Science, Graduate School of Medicine, Kyoto University
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EBISU Hiroshi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Ebisu H
Department Of Physics Nagoya Institute Of Technology
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Ebisu Hiroshi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Watanabe Junji
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Nakada Naoyuki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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JIANG Hao
Department of Radiation Medicine, Faculty of Naval Medicine, Second Military Medical University
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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RAHMAN Md.
venture Business Laboratory, Nagoya Institute of Technology
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Shao Chun
Department Of Electrical And Electronic Engineering Tokushima University:textile Engineering Institu
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Shao C
Research Center For Nano-device And System Nagoya Institute Of Technology
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Dong Jie
Nippon Sanso Corporation Tsukuba Laboratories
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Jiang H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jiang Hao
Department Of Mathematics Xixi Campus Of Zhejiang University
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Soga Takashi
Central Research Laboratory Hitachi Limited
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Watanabe J
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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IZUMI Katsutoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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NAKASIMA Kenshiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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NAKATA Naoyuki
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Gangyuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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ZHAO Guang-Yuan
Venture Business Laboratory, Nagoya Institute of Technology
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ZHAO Guang-Yuan
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Rahman Md.mosaddeq-ur
Nagoya Institute Of Technology
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Nakasima Kenshiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Shao Chun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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MATSUMOTO Kou
Nippon Sanso Corporation, Tsukuba Laboratories
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Izumi Katsutoshi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Izumi Katsutoshi
Research And Development Bureau N.t.t.
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Nakamura Kouichi
Department Of Morphological Brain Science Graduate School Of Medicine Kyoto University:core Research
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Matsumoto Kou
Nippon Sanso Corporation Tsukuba Laboratories
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Niwano Yutaka
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Nitatori Kouichi
ATR Optical and Radio Communications Research Laboratories
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Niwano Y
Mitsubishi Electric Corp. Kumamoto Jpn
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Thilakan Periyasamy
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Nakamura Kouichi
Department Of Civil And Environmental Engineering Nagaoka University Of Technology
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Jiang Hao
Department Of Bioprocess Development
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Zhao Guang
Satellite Venture Business Laboratory, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Jimbo Takashi
Department of Environmental Technology and Urban Planning. Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
著作論文
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD
- First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition