High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photoluminescence and capacitance–voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD@. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-03-15
著者
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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ZHAO Guang
Satellite Venture Business Laboratory, Nagoya Institute of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Zhao Guang
Satellite Venture Business Laboratory, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Jimbo Takashi
Department of Environmental Technology and Urban Planning. Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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