N/Ge Co-Implantation into GaN for N-Type Doping
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Kachi Tetsu
Toyota Central R&D Labs., Inc.
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Kachi Tetsu
Toyota Central Research And Development Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Kachi Tetsu
Toyota Central Research & Development. Inc.
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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NAKANO Yoshitaka
Toyota Central Research and Development Laboratories, Inc.
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Nakano Yoshitaka
Toyota Central Research And Development Laboratories Inc.:department Of Environmental Technology And
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Nakano Yoshitaka
Toyota Central Research And Development Laboratories Inc.
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Nakano Yoshitaka
TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
関連論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers
- Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
- Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- Growth of cupric oxide nanostructure by thermal oxidation of copper (シリコン材料・デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (シリコン材料・デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子デバイス)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子デバイス)
- Growth of cupric oxide nanostructure by thermal oxidation of copper (電子部品・材料)
- An ultrasonic method for synthesis of ZnO nanostructure on glass substrates (電子部品・材料)
- Effects of Al content on Zn_Mg_O Thin Films Deposited by Sol-Gel Spin Coating
- Effects of Homoepitaxial GaAs/GaAs and Heteroepitaxial GaAs/Si Solar Cells after 1MeV Electron Irradiation for Space Application
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- Effects of 1MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
- Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
- N/Ge Co-Implantation into GaN for N-Type Doping
- N/Ge Co-Implantation into GaN for N-Type Doping
- Anisotropic Properties of Photon Drag Effect in p-type Germanium
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Properties of Pulsed-laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO_2|Dye|CuI Solid-State Photovoltaic Solar Cells
- Motion Detecting Artificial Retina Model by Two-Dimensional Multi-Layered Analog Electronic Circuits
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
- Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Valence-Band Discontinuity at the AIN/Si Interface
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- New Technique to Fabricate Stress-Relieved Reliable Lasers on Si Substrates
- Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
- Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
- High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
- High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- GaAs/AlGaAs Single Quantum Well Optical Switch Fabricated on Si Substrate
- Two-Dimensional Growth of GaP on Si Substrates under High V/III Ratio by Metal Organic Vapor Phase Epitaxy
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1 MeV Electron Irradiation
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
- Recent Advances on GaN Power Devices
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- FOREWORD
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
- Reliability Evaluation of Al