GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

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概要

• 論文の詳細を見る
• 2008-02-25

著者

• Kachi Tetsu

  Toyota Central R&D Labs., Inc.

• Uesugi Tsutomu

  Toyota Central R&d Labs. Inc.

• Uesugi Tsutomu

  Toyota Central R&d Laboratories Inc.

• Kato M

  Toyota Central R&d Laboratories Inc.

• Kachi Tetsu

  Toyota Central R&d Laboratories Inc.

• Kachi Tetsu

  Toyota Central R & D Laboratories Inc.

• Kato M

  Japan Atomic Energy Res. Inst. Ibaraki Jpn

• Kato Masatsune

  Department Of Applied Physics Faculty Of Engineering Tohoku University

• KODAMA Masahito

  Toyota Central R&D Laboratories, Inc.

• SUGIMOTO Masahiro

  Toyota Motor Corp.

• HAYASHI Eiko

  Toyota Central R&D Laboratories, Inc.

• SOEJIMA Narumasa

  Toyota Central R&D Laboratories, Inc.

• ISHIGURO Osamu

  Toyota Central R&D Laboratories, Inc.

• KANECHIKA Masakazu

  Toyota Central R&D Laboratories, Inc.

• ITOH Kenji

  Toyota Central R&D Laboratories, Inc.

• UEDA Hiroyuki

  Toyota Central R&D Laboratories, Inc.

• Hayashi Eiko

  Toyota Central R&d Laboratories Inc.

• Ishiguro Osamu

  Toyota Central R&d Laboratories Inc.

• Soejima Narumasa

  Toyota Central R&d Laboratories Inc.

• Kanechika Masakazu

  Toyota Central R&d Laboratories Inc.

• Itoh Kenji

  Toyota Central R&d Laboratories Inc.

• Ueda Hiroyuki

  Toyota Central R&d Laboratories Inc.

• Kodama Masahito

  Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan

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