Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
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概要
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Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which has AlGaN/GaN channel. The other is trench gate MOSFET fabricated by novel wet etching technology. Both devices have shown good performances though the performances were yet far from the expected potential.
- 社団法人電子情報通信学会の論文
- 2008-07-02
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関連論文
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