Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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概要
- 論文の詳細を見る
We evaluate characteristics of GaN p-n diodes fabricated on free-standing GaN substrates with plasma induced damages at p-n junctions. The leakage current was increased by the plasma damage, and an insertion of n-GaN between the junction and the damage layer was effective to suppress the leakage current. From C-V characteristics, it is suggest that an n^+ layer induced by plasma process was formed.
- 社団法人電子情報通信学会の論文
- 2010-06-23
著者
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Kachi Tetsu
Toyota Central R&D Labs., Inc.
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Uesugi Tsutomu
Toyota Central R&d Labs. Inc.
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Hashizume Tamotsu
Rcieq Hokkaido University
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Kachi Tetsu
Toyota Central R&d Labs. Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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