Kachi Tetsu | Toyota Central R&D Labs., Inc.

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著作論文

Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
N/Ge Co-Implantation into GaN for N-Type Doping
N/Ge Co-Implantation into GaN for N-Type Doping
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon

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