Hashizume Tamotsu | Rcieq Hokkaido University
スポンサーリンク
概要
関連著者
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Kachi Tetsu
Toyota Central R&D Labs., Inc.
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Uesugi Tsutomu
Toyota Central R&d Labs. Inc.
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Hashizume Tamotsu
Rcieq Hokkaido University
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Uesugi Tsutomu
Toyota Central R&D Labs., Inc.
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Hashizume Tamotsu
RCIEQ, Hokkaido University
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Kachi Tetsu
Toyota Central R&d Labs. Inc.
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Kachi Tetsu
Toyota Central R&D Labs., Inc.
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Uesugi Tsutomu
Toyota Central R&D Labs., Inc.
著作論文
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)