ARAI Eisuke | Department of Electrical and Computer Engineering, Nagoya Institute of Technology

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概要

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著作論文

Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
Control of Surface Recombination of Si Wafers by an External Electrode
Electrical and Optical Properties of Cds Films Grown by Photochemical Deposition From Aqueous Solutions
A New Technique of Compound Semiconductor Deposition from a Aqueous Solution by Photochemical Reaction
Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
Search for Midgap Levels in 3C-SiC Grown on Si Substrates
Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator

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