Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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KATO Masashi
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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Tokuda Yutaka
Depertment Of Electronics Aichi Institute Of Technology
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ARAI Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Kato M
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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OKUMURA Tsugunori
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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Yamada N
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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SOBUE Fumitaka
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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YAMADA Noboru
Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laborat
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