Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-30
著者
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KATO Masashi
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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ARAI Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Watanabe Hideki
Department Of Cardiology Kinu Medical Association Hospital
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Kato M
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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MORI Tatsuhiro
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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SUMIE Shingo
LEO Division, Kobelco Research Institute, Inc.
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HASHIZUME Hidehisa
LEO Division, Kobelco Research Institute, Inc.
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