Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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Tanaka Y
Department Of Surgery Tokai University School Of Medicine
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Tokuda Y
Aichi Inst. Technol. Toyota Jpn
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Tokuda Yutaka
Depertment Of Electronics Aichi Institute Of Technology
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Tokuda Yutaka
Department Of Surgery Tokai University School Of Medicine
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ARAI Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ICHIMURA Masaya
Center for Cooperative Research, Nagoya Institute of Technology
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Arai E
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Arai E
Nagoya Inst. Technol. Nagoya Jpn
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YAMADA Norihide
Hewlett-Packard Laboratories
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Tanaka Yasuhiko
Department Of Ophthalmology School Of Medicine Keio University
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Ichimura Masaya
Center For Cooperative Research Nagoya Institute Of Technology
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Yamada N
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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KOGA Yoshihiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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YAMADA Noboru
Semiconductor Device Laboratory, Electronics Device Division, Toyota Central Research and Developmen
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ABE Tetsushi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Abe Tetsushi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Koga Yoshihiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ichimura M
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
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Yamada N
Yonezawa Women's College Of Yamagata Prefecture
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Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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