Effects of an Ultrathin Inserted Si Layer on Dislocation Nucleation in Ge/Si Heterostructures

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概要

• 論文の詳細を見る

• We theoretically investigate the effects of an ultrathin inserted Si layer on misfit dislocation nucleation in Ge /Si. The inserted layer does not significantly change the equilibrium critical thickness for dislocation nucleation, but it increases the energy barrier for dislocation nucleation at the surface. For example, a dislocation needs to surmount an energy barrier of about 0.65eV/Å in order to nucleate at the surface of Ge/Si, but the energy barrier increases to about 0.8eV/Å if a 2-monolayer-thick Si layer is inserted near the surface. Thus, the dislocation nucleation will be kinetically delayed by insertion of the Si-layer.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• ICHIMURA Masaya

  Center for Cooperative Research, Nagoya Institute of Technology

• Ichimura Masaya

  Center For Cooperative Research Nagoya Institute Of Technology

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