Photoluminescence and Raman Scattering of Electrochemically Deposited CdS Films
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概要
- 論文の詳細を見る
CdS films were electrochemically deposited from acidic solutions containing CdSO_4 and Na_2S_2O_3. Photoluminescence spectra of these films were measured using the 325 nm line of a He-Cd laser as the light source at 77K. For the films annealed at 300℃, we observed overlapping peaks at 488 and 502nm. The peak at 488nm was assigned to the band-edge emission of CdS. The peak at 502 nm was thought to be due to point defects generated by annealing. As the annealing temperature was raised, the band-edge emission became weaker and the luminescence due to the point defects shifted to longer wavelengths. These results were compared with the results of Raman scattering.
- 社団法人応用物理学会の論文
- 1996-11-15
著者
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ICHIMURA Masaya
Center for Cooperative Research, Nagoya Institute of Technology
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GOTO Fumitaka
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Ichimura Masaya
Center For Cooperative Research Nagoya Institute Of Technology
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Goto Fumitaka
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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SHIRAI Katsunori
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Goto F
Nagoya Inst. Technol. Nagoya Jpn
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Shirai Katsunori
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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