Antibodies as molecular target-based therapy : trastuzumab
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概要
- 論文の詳細を見る
- 2003-08-01
著者
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Tokuda Yutaka
Department Of Surgery Tokai University School Of Medicine
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
関連論文
- Effect of Oxygen Impurity on the Production of Room-Temperature Stable Metastable Defects in n-Type Silicon Implanted with Hydrogen Ions at 88K
- Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88K
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- Evaluation of HER2 Status: For the Treatment of Metastatic Breast Cancers by Humanized Anti-HER2 Monoclonal Antibody (Trastuzumab) (Pathological Committee for Optimal Use of Trastuzumab)
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- Prognostic Parameters in Axillary Node Negative Breast Cancer
- Increased phosphorylation of Akt in triple-negative breast cancers
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- Clinicopathological correlation between expression of PTHrP receptor and various prognostic factors in breast cancer without axillary lymph node metastasis
- Compassionate Use of Humanized Anti-HER2/neu Protein, Trastuzumab for Metastatic Breast Cancer in Japan
- Clinical Development of Trastuzumab in Breast Cancer
- Comparative Efficacy of Positron Emission Tomography and ultrasonography in Preoperative Evaluation of Axillary Lymph Node Metastases in Breast Cancer
- Autografting with peripheral blood CD34-positive cells following high-dose chemotherapy against breast cancer
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- A Study of 46 Cumulative Breast Cancer Autopsy Cases
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- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Observation of High Dose H^+ Implanted Damaged Layer
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Search for Midgap Levels in 3C-SiC Grown on Si Substrates
- Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
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- Deep-Level Transient Spectroscopy Study of Hydrogen-Related Traps Formed by Wet Chemical Etching in Electron-Irradiated n-Type Silicon
- Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K
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