Effect of Oxygen Impurity on the Production of Room-Temperature Stable Metastable Defects in n-Type Silicon Implanted with Hydrogen Ions at 88 K
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概要
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The effect of oxygen impurity on the production of room-temperature stable metastable defects has been studied in n-type silicon implanted with hydrogen ions at 88 K. Deep-level transient spectroscopy measurements have been performed for implanted epitaxial-(Epi) and Czochralski-grown (CZ) samples. It is found that three metastable defects ($E_{\text{c}}$—0.29, 0.41 and 0.55 eV) are observed in implanted CZ samples as already reported, while no production of metastable defects is revealed in Epi samples. This indicates that metastable defects are hydrogen-related defects involving oxygen.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-06-15
著者
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Sugiyama Takahide
Toyota Central R&d Labs. Inc.
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ISHIKKO Masayasu
Toyota Central R&D Labs., Inc.
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
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IWATA HIROYUKI
Department of Applied Chemistry, Graduate School of Engineering, Tokyo Metropolitan University
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Iwata Hiroyuki
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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Tokuda Yutaka
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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Ishikko Masayasu
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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