Deep-Level Transient Spectroscopy Studies of Filling Behavior of a Hydrogen-Related Metastable Defect in n-Type Silicon
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概要
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Deep-level transient spectroscopy (DLTS) has been used to study the filling behavior of a hydrogen-related metastable defect labeled EM1 ($E_{\text{c}}-0.29$ eV) which is observed in oxygen-rich n-type silicon implanted with hydrogen ions at 88 K and subsequently heated to room temperature. The EM1 DLTS peak height decreases exponentially with filling pulse duration time in the range studied (1 ms to 50 s) and reaches saturation with a nonzero value. This result contradicts the filling behavior due to the carrier capture process at traps. The decreasing exponential dependence of the EM1 DLTS peak height on filling time is reproduced when the measurement is restricted to temperatures up to 175 K. This observation is ascribed to the transformation of EM1 occurring during DLTS measurements, which is different from its metastable reaction reported previously. EM1, the stable state under reverse bias, is transformed into two stable states under zero bias with different activation energies.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
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Iwata Hiroyuki
Department Of Electrical And Electronics Engineering Aichi Institute Of Technology
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Nakashima Koji
Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, Toyota, Aichi 470-0392, Japan
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Nakamura Wakana
Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, Toyota, Aichi 470-0392, Japan
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IWATA HIROYUKI
Department of Applied Chemistry, Graduate School of Engineering, Tokyo Metropolitan University
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Tokuda Yutaka
Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, Toyota, Aichi 470-0392, Japan
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