Deep-Level Transient Spectroscopy Study of Hydrogen-Related Traps Formed by Wet Chemical Etching in Electron-Irradiated n-Type Silicon
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Hydrogen has been introduced into 10 MeV electron-irradiated n-type silicon by wet chemical etching. The introduction of hydrogen causes the reduction of the concentration of the A center and divacancy, while it induces the formation of the NH1 electron trap (E_c - 0.31 eV). The NH1 trap is found to correspond to one of the hydrogen-related traps in hydrogen-implanted n-type silicon, which has not been observed in electron-irradiated hydrogenated n-type silicon. The NH1 trap is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen.
- 社団法人応用物理学会の論文
- 1998-04-15
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