Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy
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概要
- 論文の詳細を見る
Majority-carrier traps produced in silicon by fast neutron irradiation were studied by the deep-level transient spectroscopy (DLTS). The measurement technique of the DLTS was developed, which was similar to that using a lock-in amplifier, but had some advantages over it. Three electron traps (E1, E2 and E3) and two hole traps (H1 and H2) were observed in fast-neutron-irradiated n- and p-type silicon, respectively. The energy levels and majority-carrier capture cross sections for these traps were determined. The introduction rates of E1 (E_c-0.15 eV), E2 (E_c-0.21 eV), E3 (E_c-0.39 eV), H1 (E_v+0.15 eV) and H2 (E_v-0.34 eV) were 4.7, 1.4, 3.2, 1.8 and 5.5 cm^<-1>, respectively. Comparison with other published data was also made.
- 社団法人応用物理学会の論文
- 1979-02-05
著者
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Shimizu Nobuyuki
Department Of Cardiology Showa University Fujigaoka Hospital
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Tokuda Yutaka
Department Of Electronics Aichi Institute Of Technology
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Usami Akira
Department Of Electronics Nagoya Institute Of Technology
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
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Shimizu Nobuyuki
Department Of Electronics Nagoya Institute Of Technology
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Shimizu Nobuyuki
Department Of Biotechnology Graduate School Of Engineering Osaka University
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Usami Akira
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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USAMI Akira
Department of Applied Chemistry, Seikei University
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