Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K
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概要
- 論文の詳細を見る
We report on the first observation of metastable defects in n-type silicon implanted with 90 keV hydrogen ions at 88 K at a dose of $2\times 10^{10}$ cm-2. Schottky contacts were fabricated on the implanted surfaces to study room-temperature stable defects by deep-level transient spectroscopy. After reverse-bias cooling, three new peaks ($E_{\text{c}}$—0.29, 0.41, 0.55 eV) appear in addition to well-known defects. Metastable defects are hydrogen-related and their production rates are higher in the 88 K implantation than in the room-temperature implantation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-11-15
著者
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Sugiyama Takahide
Toyota Central R&d Labs. Inc.
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KANAZAWA Shigeki
Department of Electronics, Aichi Institute of Technology
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ISHIKO Masayasu
Toyota Center R&D Labs., Inc.
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
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IWATA HIROYUKI
Department of Applied Chemistry, Graduate School of Engineering, Tokyo Metropolitan University
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Ishiko Masayasu
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Kanazawa Shigeki
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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