Effects of Trap Levels on Reverse Recovery Surge of Silicon Power Diode

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概要

• 論文の詳細を見る

• In this paper, we report on the effects of trap energy levels on the reverse recovery surge, for the first time. The different current and temperature dependences of the reverse recovery surge with shallow and deep trap energy levels were measured. Results of simulations of current and temperature dependences of the reverse recovery surge with different trap energy levels were similar to measurement results. Through numerical and theoretical analyses based on the Shockley--Read--Hall (SRH) model, it was confirmed that variations in recombination rate due to different trap energy levels affect the current and temperature dependences of the reverse recovery surge. We found that in order to achieve a soft recovery in the design of silicon power diodes, the trap energy levels play a crucial role along with the carrier lifetime profile.

• The Japan Society of Applied Physicsの論文
• 2013-04-25

著者

• Sugiyama Takahide

  Toyota Central R&d Labs. Inc.

• Yamashita Yusuke

  Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan

• Machida Satoru

  Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan

• Misumi Tadashi

  Toyota Motor Corporation, Toyota, Aichi 470-0309, Japan

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• Effect of Oxygen Impurity on the Production of Room-Temperature Stable Metastable Defects in n-Type Silicon Implanted with Hydrogen Ions at 88 K
• Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K
• Effects of Trap Levels on Reverse Recovery Surge of Silicon Power Diode

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