Electrical Conductivity of Low-Temperature-Deposited Al_<0.1>Ga_<0.9>N Interlayer

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-12-15

著者

• TAKEUCHI Tetsuya

  Department of Physics,Faculty of Science,Osaka University

• Watanabe Satoshi

  Agilent Technologies

• Tanaka T

  Department Of Electric And Electronic Engineering Toyohashi University Of Technology

• YAMADA Norihide

  Agilent Technologies

• Amano Hiroshi

  Department of Cardiology and Pneumology, Dokkyo University School of Medicine

• Takeuchi Tetsuya

  Department Of Electrical And Electronic Engineering Meijo University

• Kamiyama S

  Faculty Of Science And Technology Meijo University

• Kamiyama S

  Silicon Systems Research Laboratories Nec Corporation

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Akasaki I

  Faculty Of Science And Technology Meijo University

• Akasaki I

  Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Tanaka T

  Corporate Research And Development Laboratories Pioneer Corporation

• YAMADA Norihide

  Hewlett-Packard Laboratories

• IWAYA Motoaki

  Department of Electrical and Electronic Engineering, Meijo University

• Takeuchi T

  Department Of Chemical Engineering Science Yokohama National University

• HAYASHI Nobuaki

  Department of Electrical and Electronic Engineering, Meijo University

• KAMIYAMA Satoshi

  High-Tech Research Center, Meijo University

• KANEKO Yawara

  Agilent Laboratories

• Yamada N

  Matsushita Electric Industrial Co. Ltd. Osaka Jpn

• Iwaya M

  Faculty Of Science And Technology Meijo University

• Tanaka T

  Ceramic Operation Ibiden Co. Ltd.

• Yamada N

  Yonezawa Women's College Of Yamagata Prefecture

• Hayashi Nobuaki

  Department Of Electrical And Electronic Engineering Meijo University

• Kamiyama Satoshi

  Faculty of Science and Technology, Meijo University

• Iwaya Motoaki

  Faculty of Science and Technology, Meijo University

• Tanaka Tooru

  Faculty of Science and Technology, Meijo University

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University

• Kamiyama Satoshi

  Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University

関連論文

• Magnetization Process of Haldane Materials TMNIN and NINAZ
• Multiband Superconductivity in Heavy Fermion Compound CePt_3Si without Inversion Symmetry : An NMR Study on a High-Quality Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Magnetization Measurement of NENP and NINO in High Magnetic Field
• Current Dependence of In-Plane Electroluminescence Distribution of In_x Ga_ N/GaN Multiple Quantum Well Light Emitting Diodes
• A Quantum Spin Chain in High Magnetic Fields
• Hemodynamic Effects of Positive end-expiratory Pressure on Right Ventricular Diastolic Function in Patients with Acute Myocardial Infarction
• Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
• GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
• Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
• Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• High Field Magnetization of Cr-Dimer Complexes
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Leaflet Folding Plasty for Mitral Valve Repair : Technical Application and Early Outcome
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Microscopic Investigation of Al_Ga_N on Sapphire
• Structure of Self-Assembled Monolayers from Amphiphilic Diacetylene Derivatives on Indium-Tin Oxide
• Alignment of Surface-Stabilized Ferroelectric Liquid Crystal by the Self-Assembled Monolayers of Amphiphilic Diacetylene Derivatives
• New RAM-bus Memory System with Interchip Optical Interconnection
• Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
• Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
• Optical Transitions of the Mg Acceptor in GaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
• Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
• Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
• Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
• Freeze-Drying Process to Avoid Resist Pattern Collapse
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
• Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
• Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
• Large Grain Growth in Cu(In, Ga)Se_2 Thin Films with Band Gap of around 1.4 eV by Thermal Crystallization in Saturated Se Vapors
• Preparation of Ordered Vacancy Chalcopyrite Thin Films by RF Sputtering from CuInSe_2 Target with Na_2Se
• Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
• Modulation Type Pyroelectric IR Detector
• Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Optical Properties of Strained AlGaN and GaInN on GaN
• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
• Identification of Potential Estrogenic Environmental Pollutants by Terahertz Transmission Spectroscopy
• Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
• Present and Future Nitride-Based Devices
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Study of a simple sensor for stress history measurements of a structural member using a piezoelectric element
• Imagings of Picosecond-Photoexcited Carriers and Enhanced Auger Recombination Rate by Transient Reflecting Grating Measurements
• Laser-Stimulated Scattering Microscope Study of an Jon-Implanted Silicon Surface
• DEPURINATION OF ADENOSINE AND DEOXYADENOSINE MONOPHOSPHATES IN THE HEMIN-HYDROPEROXIDE SYSTEM
• Low-Intensity Ultraviolet Photodetectors Based on AlGaN
• Investigation of the Leakage Current in GaN P-N Junctions
• Investigation of the Characteristics of a Piezoelectric Chopper for a Modulation-Type Pyroelectric Infrared Detector
• Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
• Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities
• Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
• Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction : Resist Material and Process
• Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
• Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering
• Identification of Potential Estrogenic Environmental Pollutants by Terahertz Transmission Spectroscopy
• A New-Structure IR Gas Sensor
• Modulation Type Pyroelectric Infrared Sensor Using LiTaO_3 Single Crystal : P: Pyroelectrics
• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
• Thermogravimetric and High-Temperature X-Ray Studies on the Orthorhombic-to-Tetragonal Transition of YBa_2Cu_3O_y
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
• High T_c Superconductor YBa_2Cu_3O_y : Oxygen Content vs T_c Relation
• High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
• Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
• Effects of Nano- and Microscale SiO
• Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
• Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Stacking Faults and Luminescence Property of InGaN Nanowires
• Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
• GaN Overgrowth on Thermally Etched Nanoporous GaN Template
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)

もっと見る 閉じる

スポンサーリンク