Current Dependence of In-Plane Electroluminescence Distribution of In_x Ga_<1-x> N/GaN Multiple Quantum Well Light Emitting Diodes

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2003-10-15

著者

• Watanabe Satoshi

  Agilent Technologies

• ITOH Hiroshi

  Agilent Technologies

• GOTO Masahiro

  Agilent Technologies

• YAMADA Norihide

  Agilent Technologies

• MISRA Mira

  Lumileds Lighting

• KIM Andy

  Lumileds Lighting

• STOCKMAN Steve

  Lumileds Lighting

関連論文

• Current Dependence of In-Plane Electroluminescence Distribution of In_x Ga_ N/GaN Multiple Quantum Well Light Emitting Diodes
• GaN-Based Light Emitting Diodes With Tunnel Junctions : Semiconductors
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Identification of Potential Estrogenic Environmental Pollutants by Terahertz Transmission Spectroscopy
• Identification of Potential Estrogenic Environmental Pollutants by Terahertz Transmission Spectroscopy

スポンサーリンク